Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack-Reference-Cited by-同舟云学术

Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack

Published:2023-03 Issue: Volume:201 Page:108579
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jiang Guangyuan,Cui Peng,Liu Yang,Yang Guang,Lv Yuanjie,Fu Chen,Zhang Guangyuan,Lin Zhaojun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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2. Review of technology for normally-off HEMTs with p-GaN gate;Greco;Mater Sci Semicond Process,2018

3. Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors;Wu;IEEE Electron Device Lett,2015

4. An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT;Wei;IEEE Trans Electron Devices,2018

5. Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics;Zhu;Jpn J Appl Phys,2016

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