Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors
Author:
Funder
National Natural Science Foundation of China
Shandong University
Publisher
Elsevier BV
Subject
General Engineering
Reference39 articles.
1. A 10-W high-power amplifier using input nonlinearity for K-band satcom applications;Yi;IEEE Microw. Wireless Compon. Lett.,2022
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3. An improved GaN P-HEMT small-signal equivalent circuit with its parameter extraction;Zhang;Microelectron. J.,2021
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5. High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure;Zhou;Appl. Phys. Lett.,2022
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