Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs With AlN/SiN Bilayer Dielectric-Reference-Cited by-同舟云学术

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs With AlN/SiN Bilayer Dielectric

Published:2022-07 Issue:7 Volume:43 Page:1025-1028
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Bin¹^ORCID,Wang Jinyan¹^ORCID,Wang Chen¹,Wang Xin¹,Huang Chengyu¹^ORCID,He Jiayin¹,Wang Maojun¹^ORCID,Mo Jianghui²,Hu Yansheng²,Wu Wengang¹

Affiliation:

1. Institute of Microelectronics, Peking University, Beijing, China

2. Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, China

Funder

National Key Research and Development Program of China

Ningbo Key Scientific and Technological Project

Research Staff of Atomic Nano-Materials and Equipment Company Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9811240/09787501.pdf?arnumber=9787501

Reference27 articles.

1. Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies;tang;Proc IEEE Int Electron Devices Meeting,2013

2. Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment

3. E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

4. High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

5. Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

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