Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=1/a=012102/pdf
Reference19 articles.
1. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
2. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
3. Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
4. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate
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1. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers;Materials;2023-06-08
2. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes;Optics Express;2020-07-15
3. Thermal boundary conductance between high thermal conductivity boron arsenide and silicon;Journal of Applied Physics;2020-02-07
4. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures;Semiconductor Science and Technology;2014-12-15
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