InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference11 articles.
1. Suppression of<100>Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
5. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
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