Suppression of<100>Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate;APL Materials;2023-09-01
2. Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon;Applied Physics Letters;2020-09-21
3. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering;Journal of Applied Physics;2019-04-28
4. Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1−xN/GaN heterostructures: A possible explanation of defect insensitivity;Physical Review B;2011-05-09
5. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition;Journal of Applied Physics;2002
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