Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon-Reference-Cited by-同舟云学术

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Published:2020-09-21 Issue:12 Volume:117 Page:122101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Selvidge Jennifer¹^ORCID,Norman Justin¹^ORCID,Hughes Eamonn T.¹^ORCID,Shang Chen¹,Jung Daehwan²^ORCID,Taylor Aidan A.¹,Kennedy M. J.³,Herrick Robert⁴,Bowers John E.¹³,Mukherjee Kunal¹^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Korea Institute of Science and Technology, Seoul 02792, South Korea

3. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA

4. Intel Corporation, Santa Clara, California 95054, USA

Funder

Advanced Research Projects Agency - Energy

Division of Materials Research

Division of Graduate Education

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0023378

Reference36 articles.

1. Photonic Integration With Epitaxial III–V on Silicon

2. Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

3. On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

4. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

5. Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

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