Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes-Reference-Cited by-同舟云学术

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

Published:2020-07-15 Issue:15 Volume:28 Page:22524
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kafar A.^ORCID,Ishii R.,Gibasiewicz K.^ORCID,Matsuda Y.,Stanczyk S.^ORCID,Schiavon D.,Grzanka S.,Tano M.,Sakaki A.,Suski T.,Perlin P.,Funato M.,Kawakami Y.

Funder

Japan Society for the Promotion of Science

Fundacja na rzecz Nauki Polskiej

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference49 articles.

1. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

2. Advantages of III-nitride laser diodes in solid-state lighting

3. Laser-driven phosphor-converted white light source for solid-state illumination

4. Optical Disk Recording Using a GaN Blue-Violet Laser Diode

5. III-nitride micro-emitter arrays: development and applications

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