Advantages of III-nitride laser diodes in solid-state lighting-Reference-Cited by-同舟云学术

Advantages of III-nitride laser diodes in solid-state lighting

Published:2015-01-14 Issue:5 Volume:212 Page:980-985
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wierer Jonathan J.¹,Tsao Jeffrey Y.¹

Affiliation:

1. Sandia National Laboratories; PO Box 5800; Albuquerque New Mexico 87185 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Auger recombination in InGaN measured by photoluminescence

2. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

3. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

4. On the origin of IQE-‘droop’ in InGaN LEDs

5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

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