Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures-Reference-Cited by-同舟云学术

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Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

Published:2014-12-15 Issue:1 Volume:30 Page:015018
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang Guangxu,Tao Xixia,Liu Junlin,Jiang Fengyi

Funder

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=1/a=015018/pdf

Reference30 articles.

1. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD

2. GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

3. Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

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1. Research on Luminance Uniformity of Green Micro-LED via Microscopic Hyperspectral System;IEEE Transactions on Electron Devices;2024-07

2. Electrically pumped optomechanical beam GaN-LED accelerometer based on the quantum-confined Stark effect;Photonics Research;2023-08-28

3. Injection current and temperature dependence of the optoelectronic properties for electrical-stressed InGaN based micro-LEDs;Optical Materials Express;2023-03-24

4. Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm;Journal of Physics D: Applied Physics;2022-05-24

5. Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources;Crystals;2021-09-02

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