Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3148328
Reference12 articles.
1. LEDs Magazine, edited by T. Whitaker (Cabot Media, Bristol, 2007), p. 38.
2. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
3. Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials
4. Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD
5. Direct evidence of tensile strain in wurtzite structuren−GaNlayers grown onn−Si(111)using AlN buffer layers
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