GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
2. Damage-free separation of GaN thin films from sapphire substrates
3. A vertical injection blue light emitting diode in substrate separated InGaN heterostructures
4. The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off
5. GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
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1. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07
2. Fabrication and characterization of an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane in the blue range;Chinese Optics;2021
3. High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy;Applied Physics Express;2020-11-26
4. Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates;Crystals;2020-09-01
5. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane;Chinese Optics;2020
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