GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques-Reference-Cited by-同舟云学术

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GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques

Published:2004-08-10 Issue:8A Volume:43 Page:5239-5242
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wuu Dong-Sing,Hsu Shun-Cheng,Huang Shao-Hua,Wu Chia-Cheng,Lee Chia-En,Horng Ray-Hua

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07

2. Analysis of Altered Layers Formed during Substrate Exfoliation of AlGaN Crystals Grown on Periodic AlN Nanopillars Using the Heated‐Pressurized Water Method;physica status solidi (b);2024-02-29

3. The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes;Journal of Applied Physics;2024-01-23

4. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14

5. Research on dynamic thermal performance of high-power ThinGaN vertical light-emitting diodes with different submounts;Semiconductor Science and Technology;2020-10-16

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