Research on dynamic thermal performance of high-power ThinGaN vertical light-emitting diodes with different submounts

Abstract

Abstract Investigation of dynamic thermal performance is a key to improve the heat management of high-power (HP) vertical light-emitting diodes (VLEDs). Specifically, the thermal time constant is a crucial parameter for optimizing the design and reliability of HP LEDs. Herein, the dynamic thermal behavior of seven HP ThinGaN VLEDs with different constructions was demonstrated. The LEDs’ thermal parameters were measured through the thermal transient tester system by a forward voltage technique. A three-stage of multiexponential function model was applied to divide the transient response curve into three regions with different thermal properties. This study focused on analyzing the first region that involved the chip region (epitaxial layer, wafer bonding layer, and submount) and chip bonding layer. The submounts of the LEDs under consideration include silicon carbide (SiC), silicon (Si), sapphire (Al2O3), and germanium (Ge). The results revealed that with a qualified wafer bonding layer, the LED packages with SiC, Si, and Al2O3 submount presented the optimum thermal time constant, which was 85, 69, 75, and 81 ms, respectively.