Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3640229
Reference15 articles.
1. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
2. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
3. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
4. Deep centers in a free-standing GaN layer
5. Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate
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