Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1313275
Reference15 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Schottky barrier engineering in III–V nitrides via the piezoelectric effect
5. Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
Cited by 171 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03
2. Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers;Japanese Journal of Applied Physics;2023-09-13
3. Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes;Journal of Applied Physics;2023-01-05
4. Effect of temperature on forward and reverse bias characteristics of GaN based Schottky diode;Materials Today: Proceedings;2023
5. Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching;Frontiers in Physics;2022-10-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3