Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1704862
Reference20 articles.
1. Optical Process for Liftoff of Group III-Nitride Films
2. Pulsed Excimer Laser Processing of AlN/GaN Thin Films
3. Damage-free separation of GaN thin films from sapphire substrates
4. Structural Characterization Of Laser Lift-Off GaN
5. Preparation of large area freestanding GaN by laser lift-off technology
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