Preparation of large area freestanding GaN by laser lift-off technology-Reference-Cited by-同舟云学术

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Preparation of large area freestanding GaN by laser lift-off technology

Published:2002-09 Issue:1-2 Volume:56 Page:43-46
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Xu J.,Zhang R.,Wang Y.P.,Xiu X.Q.,Shen B.,Gu S.L.,Shi Y.,Liu Z.G.,Zheng Y.D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. First III–V-nitride-based violet laser diodes

2. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

5. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond

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