Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=6/a=066502/pdf
Reference32 articles.
1. Role of the chamber wall in low‐pressure high‐density etching plasmas
2. Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment
3. Effects of wall recombination on the etch rate and plasma composition of an etch reactor
4. Effect of chamber wall conditions on Cl and Cl2 concentrations in an inductively coupled plasma reactor
5. Enhancement of the recombination rate of Br atoms by CF4 addition and resist etching in HBr/Cl2/O2 plasmas
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