Enhancement of the recombination rate of Br atoms by CF4 addition and resist etching in HBr/Cl2/O2 plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1619575
Reference24 articles.
1. Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy
2. Percent dissociation of Cl2 in inductively coupled, chlorine-containing plasmas
3. Measurements of the Cl atom concentration in radio‐frequency and microwave plasmas by two‐photon laser‐induced fluorescence: Relation to the etching of Si
4. Atomic chlorine concentration measurements in a plasma etching reactor. I. A comparison of infrared absorption and optical emission actinometry
5. Heterogeneous recombination of atomic bromine and fluorine
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