Multi-cycle Chamber Conditioning for Plasma Etching of SiO2: From Optimization to Stability in Lot Processing
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11090-024-10493-5.pdf
Reference25 articles.
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2. Ullal SJ, Godfrey AR, Edelberg E et al (2002) Effect of chamber wall conditions on cl and Cl2 concentrations in an inductively coupled plasma reactor. J Vac Sci Technol Vacuum Surf Film 20:43–52. https://doi.org/10.1116/1.1421602
3. Ullal SJ, Singh H, Daugherty J et al (2002) Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si. J Vac Sci Technol Vacuum Surf Film 20:1195–1201. https://doi.org/10.1116/1.1479733
4. Cunge G, Joubert O, Sadeghi N (2003) Enhancement of the recombination rate of Br atoms by CF4 addition and resist etching in HBr/Cl2/O2 plasmas. J Appl Phys 94:6285–6290. https://doi.org/10.1063/1.1619575
5. Cunge G, Pelissier B, Joubert O et al (2005) New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes. Plasma Sources Sci Technol 14:599–609. https://doi.org/10.1088/0963-0252/14/3/025
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