Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template-Reference-Cited by-同舟云学术

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

Published:2017-01-30 Issue:2 Volume:10 Page:025502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yasuda Toshiki,Takeuchi Tetsuya,Iwaya Motoaki,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=2/a=025502/pdf

Reference28 articles.

1. Origin of exciton emissions from an AlN p-n junction light-emitting diode

2. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

3. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

5. Hole Compensation Mechanism of P-Type GaN Films

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole Generation in Polarization‐Doped Al_xGa_1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al_0.35Ga_0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode;physica status solidi (a);2024-06-05

2. Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers;Journal of Alloys and Compounds;2024-05

3. Lasing Threshold Reduction of AlGaN‐Based Ultraviolet‐C Laser Diodes Using Strain Relaxed Lower Cladding Layer;physica status solidi (a);2024-02-06

4. On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes;Applied Physics Letters;2023-12-25

5. Anderson transition in compositionally graded p-AlGaN;Journal of Applied Physics;2023-11-15