Origin of exciton emissions from an AlN p-n junction light-emitting diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3574025
Reference22 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Band structure and fundamental optical transitions in wurtzite AlN
3. Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
4. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
5. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
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