Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1824181
Reference14 articles.
1. GaN, AlN, and InN: A review
2. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)
3. Field emission properties of heavily Si-doped AlN in triode-type display structure
4. DX-behavior of Si in AlN
5. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
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