Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping
Author:
Affiliation:
1. Nagoya University,Nagoya,Japan
Funder
Nagoya University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413866.pdf?arnumber=10413866
Reference30 articles.
1. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
3. Ultrawide-bandgap semiconductor AlN crystals: growth and applications
4. Large-area AlN substrates for electronic applications: An industrial perspective
5. Seeded growth of AlN bulk crystals in m- and c-orientation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1 kV Vertical P-i-N Diodes Based on Ultra-Wide Bandgap Al0.47Ga0.53N Grown by MOCVD;IEEE Electron Device Letters;2024-08
2. Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces;ACS Applied Electronic Materials;2024-04-11
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