Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces-Reference-Cited by-同舟云学术

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Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Published:2024-04-11 Issue:4 Volume:6 Page:2413-2419
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Nieminen Tarmo¹^ORCID,Koskinen Tomi²^ORCID,Kornienko Vladimir²^ORCID,Ross Glenn¹^ORCID,Paulasto-Kröckel Mervi¹

Affiliation:

1. Department of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland

2. Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland

Funder

S?hk?tekniikan Korkeakoulu, Aalto-yliopisto

Horizon 2020 Framework Programme

Business Finland

Electronic Components and Systems for European Leadership

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00068

Reference36 articles.

1. SOI thermal impedance extraction methodology and its significance for circuit simulation

2. Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

3. Thermal conductivity of single crystal and ceramic AlN

4. Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films

5. Characterisation of high thermal conductivity thin-film substrate systems and their interface thermal resistance

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