DX-behavior of Si in AlN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.R16283/fulltext
Reference19 articles.
1. 75 Å GaN channel modulation doped field effect transistors
2. Evidence for localized Si-donor state and its metastable properties in AlGaN
3. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
4. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
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