Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping-Reference-Cited by-同舟云学术

Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping

Published:2022 Issue:9 Volume:24 Page:5529-5538
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lu Shiqiang¹^ORCID,Zheng Tongchang²,Jiang Ke³,Sun Xiaojuan³^ORCID,Li Dabing³^ORCID,Chen Hangyang¹,Li Jinchai¹^ORCID,Zhou Yinghui¹,Cai Duanjun¹^ORCID,Li Shuping¹,Lin Wei¹^ORCID,Kang Junyong¹

Affiliation:

1. Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China

2. Department of Physics, School of Science, Jimei University, Xiamen 361021, China

3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China

Abstract

Additional potentials, including Coulomb interaction as well as orbital state coupling induced by Mg doping, are proposed to regulate the valence level arrangement of AlN/Al0.75Ga0.25N quantum wells.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP04303J

Reference39 articles.

1. AlGaN photonics: recent advances in materials and ultraviolet devices

2. Abnormal Radiative Interband Transitions in High-Al-Content AlGaN Quantum Wells Induced by Polarized Orbitals

3. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

4. Origin of exciton emissions from an AlN p-n junction light-emitting diode

5. Radiation and polarization properties of free-exciton emission from AlN (0001) surface

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