Abnormal Radiative Interband Transitions in High-Al-Content AlGaN Quantum Wells Induced by Polarized Orbitals
Author:
Affiliation:
1. Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
2. Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Funder
Ministry of Education of the People's Republic of China
Ministry of Science and Technology of the People's Republic of China
Natural Science Foundation of Fujian Province
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b00324
Reference19 articles.
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3. 227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
5. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
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