227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density-Reference-Cited by-同舟云学术

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

Published:2008-05-09 Issue: Volume:1 Page:051101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hirayama Hideki,Noguchi Norimichi,Yatabe Tohru,Kamata Norihiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/1/i=5/a=051101/pdf

Reference11 articles.

1. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

2. AlGaN/GaN quantum well ultraviolet light emitting diodes

3. Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

4. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

5. Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

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