Comment on “Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping” by W. Lin, J. Kang et al., Phys. Chem. Chem. Phys., 2022, 24, 5529-Reference-Cited by-同舟云学术

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Comment on “Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping” by W. Lin, J. Kang et al., Phys. Chem. Chem. Phys., 2022, 24, 5529

Published:2023 Issue:5 Volume:25 Page:4349-4351
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lambrecht Walter R. L.¹^ORCID

Affiliation:

1. Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH-44106-7079, USA

Abstract

The paper commented on addresses the crystal field splitting in AlGaN. Here, an alternative model based on bond-angle effects is proposed.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP01080A

Reference6 articles.

1. Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping

2. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

3. Simplified LCAO Method for the Periodic Potential Problem

4. W. A.Harrison , Electronic Structure and the Properties of Solids , W. H. Freeman and Co. , San Francisco , 1980

5. Motion of Electrons and Holes in Perturbed Periodic Fields

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