Anderson transition in compositionally graded p-AlGaN-Reference-Cited by-同舟云学术

Anderson transition in compositionally graded p-AlGaN

Published:2023-11-15 Issue:19 Volume:134 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Rathkanthiwar Shashwat¹^ORCID,Reddy Pramod²^ORCID,Quiñones Cristyan E.¹^ORCID,Loveless James¹^ORCID,Kamiyama Masahiro¹^ORCID,Bagheri Pegah¹^ORCID,Khachariya Dolar²^ORCID,Eldred Tim¹^ORCID,Moody Baxter²^ORCID,Mita Seiji²^ORCID,Kirste Ronny²^ORCID,Collazo Ramón¹^ORCID,Sitar Zlatko¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919, USA

2. Adroit Materials, Inc. 2 , 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA

Abstract

Mg-doped, graded AlGaN films showed the formation of an impurity band and high, temperature-invariant p-conductivity even for doping levels well below the Mott transition. However, compensating point defects disrupted the impurity band, resulting in an Anderson transition from the impurity band to valence band conduction and a more than tenfold reduction in room-temperature conductivity. This is the first demonstration of Anderson-like localization in AlGaN films.

Funder

Army Research Office

Air Force Office of Scientific Research

Advanced Research Projects Agency - Energy

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0176419/18211687/195705_1_5.0176419.pdf

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