Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=5/a=055504/pdf
Reference22 articles.
1. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory
2. Crystallization mechanisms of (In15Sb85)100−xBix phase change recording thin film
3. Phase-change materials for rewriteable data storage
4. Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory
5. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory
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