Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference22 articles.
1. Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack
2. Polycrystalline silicon-germanium heating layer for phase-change memory applications
3. Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films
4. Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
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