Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory-Reference-Cited by-同舟云学术

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Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Published:2006-10 Issue:24 Volume:252 Page:8404-8409
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Qiao Baowei,Feng Jie,Lai Yunfeng,Ling Yun,Lin Yinyin,Tang Ting’ao,Cai Bingchu,Chen Bomy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

Cited by 79 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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