Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory-Reference-Cited by-同舟云学术

Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

Published:2015-11-30 Issue:22 Volume:107 Page:222101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Qing¹²³,Liu Bo¹³,Xia Yangyang¹²³,Zheng Yonghui¹²³,Huo Ruru¹³⁴,Zhang Qi¹²³,Song Sannian¹³,Cheng Yan¹³,Song Zhitang¹³,Feng Songlin¹³

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. University of the Chinese Academy of Sciences, Beijing 100049, China

3. Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

4. ShanghaiTech University, Shanghai 200031, China

Funder

National Integrate Circuit Research Program of China

Science and Technology Council of Shanghai

Stragetic Priorty Research Program of the Chinese Academy of Sciences

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936847