Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers-Reference-Cited by-同舟云学术

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers

Published:2024-06-04 Issue:24 Volume:16 Page:31447-31456
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Pei¹^ORCID,Wu Weihua¹²,Fu Bowen¹,Zhu Xiaoqin¹,Zhai Jiwei³^ORCID

Affiliation:

1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, Jiangsu 213001, People’s Republic of China

2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People’s Republic of China

3. Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, School of Materials Science & Engineering, Tongji University, Shanghai 201804, People’s Republic of China

Funder

Graduate Research and Innovation Projects of Jiangsu Province

China Postdoctoral Science Foundation

Changzhou Municipal Science and Technology Bureau

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c02905

Reference52 articles.

1. Layer thickness dependence of the phase separation and phase change properties of Ge2Sb2Te5/TiN superlattice-like thin films

2. Successive crystallization in indium selenide thin films for multi-level phase-change memory

3. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

4. Temperature dependent evolution of local structure in chalcogenide-based superlattices

5. An overview of phase-change memory device physics

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