Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes-Reference-Cited by-同舟云学术

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Published:2011-12-01 Issue:12R Volume:50 Page:122101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inazu Tetsuhiko,Fukahori Shinya,Pernot Cyril,Kim Myung Hee,Fujita Takehiko,Nagasawa Yosuke,Hirano Akira,Ippommatsu Masamichi,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Yamaguchi Masahito,Honda Yoshio,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

2. Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

4. Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

5. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

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