Large Chip High Power Deep Ultraviolet Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

Published:2010-05-28 Issue:6 Volume:3 Page:062101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Shatalov Max,Sun Wenhong,Bilenko Yuri,Sattu Ajay,Hu Xuhong,Deng Jianyu,Yang Jinwei,Shur Michael,Moe Craig,Wraback Michael,Gaska Remis

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=6/a=062101/pdf

Reference7 articles.

1. Deep ultraviolet light-emitting diodes

2. III–Nitride UV Devices

3. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

4. Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

5. Deep-Ultraviolet Light-Emitting Diodes

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1. Progress in efficient doping of Al-rich AlGaN;Journal of Semiconductors;2024-02-01

2. Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs;physica status solidi (a);2024-01-29

3. Sub-quarter micrometer periodically poled Al0.68Sc0.32N for ultra-wideband photonics and acoustic devices;Journal of Applied Physics;2023-09-15

4. Efficiency droop in AlGaN crystal-based UVB LEDs in the context of electron blocking mechanism;Journal of Crystal Growth;2023-02

5. Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance;Scientific Reports;2022-02-16

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