Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED
Author:
Affiliation:
1. Department of Materials, University of California at Santa Barbara, Santa Barbara, CA, USA
2. Department of Materials and the Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA
Funder
National Science Foundation through the Graduate Research Fellowship Program
National Science Foundation through the Materials Research Science and Engineering Centers (MRSEC), Division of Materials Research
Solid State Lighting and Energy Electronics Center, University of California at Santa Barbara
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Link
https://ieeexplore.ieee.org/ielam/3/9843922/9736984-aam.pdf
Reference47 articles.
1. High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content
2. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
3. k⋅p method for strained wurtzite semiconductors
4. When group-III nitrides go infrared: New properties and perspectives
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