Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference29 articles.
1. Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
2. Lifetime-limiting defects in n− 4H-SiC epilayers
3. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
4. Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
5. Carrier lifetime measurement in n− 4H-SiC epilayers
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