Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Fundamentals of silicon carbide technology: Growth, characterization, devices and applications;Kimoto,2014
2. Lifetime-limiting defects in n– 4h-sic epilayers;Klein;Appl. Phys. Lett.,2006
3. Influence and mutual interaction of process parameters on the z1/2 defect concentration during epitaxy of 4h-sic;Erlekampf;Mater. Sci. Forum,2018
4. Reduction of deep levels and improvement of carrier lifetime in n-type 4h-sic by thermal oxidation;Hiyoshi;Appl. Phys. Exp.,2009
5. Enhanced annealing of the z1/2 defect in 4h–sic epilayers;Storasta;J. Appl. Phys.,2008
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation;Materials Science in Semiconductor Processing;2024-02
2. Investigation of carrier lifetime behavior in the 4H-SiC homoepitaxial layer;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
3. Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles;Micromachines;2023-02-15
4. Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm;Journal of Crystal Growth;2022-04
5. Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3