Ultra-wide band gap AlGaN polarization-doped field effect transistor-Reference-Cited by-同舟云学术

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Published:2018-06-25 Issue:7 Volume:57 Page:074103
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Armstrong Andrew M.^ORCID,Klein Brianna A.,Colon Albert,Allerman Andrew A.,Douglas Erica A.,Baca Albert G.,Fortune Torben R.,Abate Vincent M.,Bajaj Sanyam,Rajan Siddharth

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=7/a=074103/pdf

Reference27 articles.

1. High carrier concentration in high Al-composition AlGaN-channnel HEMTs

2. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

3. AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation

4. AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal

5. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

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