Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Author:

Kühne Philipp123ORCID,Armakavicius Nerijus123ORCID,Papamichail Alexis123ORCID,Tran Dat Q.23ORCID,Stanishev Vallery123ORCID,Schubert Mathias1234ORCID,Paskov Plamen P.23ORCID,Darakchieva Vanya1235ORCID

Affiliation:

1. Terahertz Materials Analysis Center (TheMAC), Linköping University, 581 83 Linköping, Sweden

2. Center for III-Nitride Technology, C3NiT—Janzén, Linköping University, 581 83 Linköping, Sweden

3. Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83 Linköping, Sweden

4. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

5. NanoLund and Solid State Physics, Lund University, 22100 Lund, Sweden

Abstract

We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/Al xGa1– xN high electron mobility transistor structure with a high aluminum content ( x =  0.78). The 2DEG sheet density [Formula: see text] cm−2, sheet mobility [Formula: see text] cm2/(Vs), sheet resistance [Formula: see text] [Formula: see text], and effective mass [Formula: see text] at low temperatures [Formula: see text] are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson–Schrödinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N ([Formula: see text]). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson–Schrödinger calculations.

Funder

VINNOVA

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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