Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga2O3 passivated by sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=7/a=070302/pdf
Reference30 articles.
1. Performance evaluation of high-power wide band-gap semiconductor rectifiers
2. SiC and GaN Power Semiconductor Devices
3. High performance GaN pin rectifiers grown on free-standing GaN substrates
4. High-breakdown-voltage pn-junction diodes on GaN substrates
5. Over 1.0 kV GaN p -n junction diodes on free-standing GaN substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of drain-induced channel effects in vertical GaN junction field-effect transistors;Semiconductor Science and Technology;2024-05-23
2. Numerical Investigation on Reducing the Auger Recombination for Quasivertical GaN‐Based PIN Diode through Reversed ITO‐pGaN Junction;physica status solidi (a);2021-08-18
3. Review of Recent Progress on Vertical GaN-Based PN Diodes;Nanoscale Research Letters;2021-06-07
4. Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule;Journal of Applied Physics;2019-07-28
5. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability;Electronics;2018-12-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3