Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule

Author:

Liu Zeng12ORCID,Liu Yuanyuan34,Wang Xia12ORCID,Li Wanjun5,Zhi Yusong12,Wang Xiaolong12,Li Peigang12,Tang Weihua12ORCID

Affiliation:

1. Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China

2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

4. The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

5. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China

Funder

Beijing Municipal Commission of Science and Technology

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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