High performance GaN pin rectifiers grown on free-standing GaN substrates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20062261?crawler=true&mimetype=application/pdf
Reference9 articles.
1. High-voltage GaN pin vertical rectifiers with 2 [micro sign]m thick i-Layer
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3. 2.6 A, 0.69 MWcm−2 single-chip bulk GaN p-i-n rectifier
4. Si+ ion implanted MPS bulk GaN diodes
5. (Reactor manufactured by Thomas Swan Scientific Equipment Ltd, Cambridge, UK
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