X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs
Author:
Affiliation:
1. School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419Korea
2. PeopleworksSeoulKorea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2017.0127
Reference21 articles.
1. Casto M. Lampenfeld M. Pencheng J. et al.: ‘100 W X‐band GaN SSPA for medium power TWTA replacement’.Wireless and Microwave Technology Conf. Tempa FL USA April2011 pp.1–4
2. Suijker E. Sudow M. Fagerlind M. et al.: ‘GaN MMIC power amplifiers for S‐band and X‐band’.European Microwave Conf. Amsterdam Netherlands Octobor2008 pp.297–300
3. Compact X-band SiGe power amplifier for single-chip phased array radar applications
4. 6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching
5. Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier
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