Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks
Author:
Affiliation:
1. University of Electronic Science and Technology of China Chengdu China
2. Sichuan Yi Feng Electronic Technology Co., Ltd Chengdu China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/mia2.12221
Reference32 articles.
1. A 6-41 GHz Distributed Amplifier with Supply Scaling for Efficiency Enhancement
2. A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch $0.15~ {\mu }\text{m}$ GaN-SiC Wafer Process Technology
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