A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch <inline-formula> <tex-math notation="LaTeX">$0.15~ {\mu }\text{m}$ </tex-math> </inline-formula> GaN-SiC Wafer Process Technology-Reference-Cited by-同舟云学术

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A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch $0.15~ {\mu }\text{m}$ GaN-SiC Wafer Process Technology

Published:2016-09 Issue:9 Volume:51 Page:2017-2026
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kobayashi Kevin W.,Denninghoff Dan,Miller Dain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7562573/07480366.pdf?arnumber=7480366

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Design of a Gain-Enhanced 1–20-GHz LNA With Output-Stage Transformer Feedback;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-09

2. Broadband Low Noise Amplifier Design For Optimal Noise and Impedance Matching;2023 IEEE Wireless Antenna and Microwave Symposium (WAMS);2023-06-07

3. A 0.6-45 GHz Ultra-Wideband Distributed Low Noise Amplifier;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

4. A Broadband LNA With Multiple Bandwidth Enhancement Techniques;IEEE Microwave and Wireless Technology Letters;2023-05

5. A 0.1–20.1-GHz Wideband Noise-Canceling $g_m$-Boosted CMOS LNA With Gain-Reuse;IEEE Transactions on Microwave Theory and Techniques;2023

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